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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4429 DESCRIPTION *High Breakdown Voltage: V(BR)CEO= 800V(Min) *Fast Switching speed *Wide Area of Safe Operation APPLICATIONS *Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICP Collector Current-Pulse w ww scs .i V 800 V 7 V 8 A 25 A 4 A 60 W .cn mi e IB B Base Current-Continuous Collector Power Dissipation @ TC=25 PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature 3 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO VCEX(SUS) V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC=5mA; RBE= IC= 4A; L=1mH, IB1=-IB2=0.8A Clamped IC=1mA; IE=0 IE=1mA; IC=0 IC= 4A; IB= 0.8A B 2SC4429 MIN 800 800 1100 7 TYP. MAX UNIT V V V V 2.0 1.5 10 10 40 V V A A IC= 4A; IB= 0.8A B VCB= 800V; IE= 0 Output Capacitance Current-Gain--Bandwidth Product w w scs .i w VEB= 5V; IC= 0 IC=0.6A ; VCE= 5V IC= 3A ; VCE= 5V .cn mi e 10 8 155 15 IE= 0 ; VCB= 10V; ftest=1.0MHz pF MHz IC= 0.6A ; VCE= 10V Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 6A , IB1=1.2A; IB2= -2.4A RL= 66.7; VCC=400V 0.5 3.0 0.3 s s s hFE-1 Classifications K 10-20 L 15-30 M 20-40 isc Websitewww.iscsemi.cn 2 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4429 w w scs .i w .cn mi e isc Websitewww.iscsemi.cn |
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